供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-11-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
相关零件
InfineonIRF1010ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 5.8Milliohms;ID 75A;D2Pak;PD 140W;VGS +/-20
onsemiHUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
VishaySUM90N06-5M5P-E3
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon SPB80N06S08ATMA1 的描述。
55V, N-Ch, 8 mΩ max, Automotive MOSFET, D2PAK, SIPMOS™, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Normal Level -Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Avalanche test; Repetive Avalanche up to Tjmax = 175 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 W; dv /dt rated | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.7 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.66 nF
Max Dual Supply Voltage55 V
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance8 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation300 W
Rds On Max7.7 mΩ
Rise Time53 ns
Schedule B8541290080
Turn-Off Delay Time54 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)55 V
合规
环境分类
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCNo
RoHSCompliant
合规声明