备用零件
Price @ 1000
$ 1.47
$ 0.646
$ 0.646
Stock
190,980
3,042,737
3,042,737
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
4 V
4 V
Rds On Max
8 mΩ
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
285 W
150 W
150 W
Input Capacitance
3.2 nF
3.247 nF
3.247 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
描述
由其分销商提供的 onsemi HUF75344P3 的描述。
N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Operating Temperature175 °C
Max Power Dissipation285 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation285 W
Rds On Max8 mΩ
Rise Time125 ns
Schedule B8541290080
Turn-Off Delay Time46 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height16.3 mm
Length10.67 mm
Width4.7 mm