Infineon IRF3205PBF

Name: Infineon IRF3205PBF
Brand: Infineon
SKU: IRF3205PBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; TO-220AB; PD 200W; gFS 44S

$ 0.678

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	63J7236	43,597	1		2.180	1.070	0.955	0.697	0.686	4d
Newark		IRF3205PBF	80,730	1		2.160	1.150	0.955	0.697	0.686
Future Electronics	3	IRF3205PBF	325,350	50	Tube			0.655	0.620	0.590
Arrow Electronics	2	IRF3205PBF	21,221	1		2.059	0.855	0.846	0.678	0.619
Rochester Electronics		IRF3205PBF	37,116					0.778	0.646	0.576	3h

数据表和文档

下载 Infineon IRF3205PBF 的数据表和制造商文档。

Newark

Datasheet8 页15 年前

Datasheet8 页25 年前

IHS

Upverter

RS (Formerly Allied Electronics)

Jameco

库存历史记录

3 个月趋势:

-43.18%

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InfineonIRF3205PBF

onsemiHUF75344P3

Price @ 1000

$ 0.678

$ 1.47

Stock

2,957,445

173,997

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

150 W

285 W

Input Capacitance

3.247 nF

3.2 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2014-01-09

LTD Date2014-07-09

描述

由其分销商提供的 Infineon IRF3205PBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8 Milliohms;ID 110A;TO-220AB;PD 200W;gFS 44S

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 55 Volt 110 Amp 3 Pin 3+ Tab TO-220 AB

Jameco

Single N-Channel 55 V 8 mOhm 146 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

55V 110A 8m´Î@10V62A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 55V, 110A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3205PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon