onsemi HUF75345P3

Name: onsemi HUF75345P3
Brand: onsemi
SKU: HUF75345P3

N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

$ 1.263

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Distributor		SKU		Min	Pkg
Newark		HUF75345P3	460	1		4.040	3.070	2.100	1.800	1.640
Verical	2	HUF75345P3	6	6			1.082	1.082	1.082	1.082
Arrow Electronics		HUF75345P3	6	1		1.082	1.082	1.082	1.082	1.082
Future Electronics		HUF75345P3	360	800	Tube				1.730	1.690
Rochester Electronics	2	HUF75345P3	768					1.570	1.300	1.160	10h

数据表和文档

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onsemi

Datasheet16 页6 年前

Datasheet0 页0 年前

IHS

Upverter

Fairchild Semiconductor

Factory Futures

库存历史记录

3 个月趋势:

-27.41%

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onsemiHUF75345P3

onsemiHUF75345P3_NL

Price @ 1000

$ 1.263

$ 1.49

Stock

283,206

6,533

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

325 W

Input Capacitance

4 nF

供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi HUF75345P3 的描述。

N-Channel 55 V 0.007 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

Future Electronics

N-Channel UltraFET Power MOSFET 55V, 75A, 7mΩ

onsemi

Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail

Verical

Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:215W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:7mohm; Package / Case:TO-220AB; Power Dissipation Pd:215W; Power Dissipation Pd:215W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

element14 APAC

These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Fairchild Semiconductor