Infineon IRF1010ZPBF

Name: Infineon IRF1010ZPBF
Brand: Infineon
SKU: IRF1010ZPBF

Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3

$ 0.928

Obsolete

制造商页面数据表

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF1010ZPBF	13,400					1.100	0.913	0.814	20h
RS (Formerly Allied Electronics)		IRF1010ZPBF	0	5	Bulk		1.920	1.730	1.730	1.730	13h
Farnell	2	IRF1010ZPBF	289	1		3.258*	2.099*	1.500*	1.500*	1.500*	19h
Mouser		942-IRF1010ZPBF	613	1	Tube	2.780	1.790	1.280	0.928	0.928
Microchip USA	2	IRF1010ZPBF	330	3K	Tube					0.734	14h

数据表和文档

下载 Infineon IRF1010ZPBF 的数据表和制造商文档。

IHS

Datasheet13 页15 年前

Datasheet12 页15 年前

Farnell

Newark

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-0.03%

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InfineonIRF1010ZPBF

InfineonAUIRF1010Z

Price @ 1000

$ 0.928

$ 1.04

Stock

429,026

93,076

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

94 A

Threshold Voltage

2 V

Rds On Max

7.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

2.84 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-03-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-12-31

LTD Date2024-06-30

描述

由其分销商提供的 Infineon IRF1010ZPBF 的描述。

Single N-Channel 55 V 7.5 mOhm 63 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 55V 94A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

Infineon

MOSFET, N, 55V, 94A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:55V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:7.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC