onsemi FQP85N06

Name: onsemi FQP85N06
Brand: onsemi
SKU: FQP85N06

Power MOSFET, N-Channel, QFET®, 60 V, 85 A, 10 mΩ, TO-220

EOL

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Distributor	SKU		Min	Pkg
element14 APAC	FQP85N06	0	1		3.037*	2.122*	1.712*	1.491*	1.491*	23h
Farnell	FQP85N06	0	1		3.464*	3.056*	2.540*	2.092*	2.092*	1d
Component Stockers USA	FQP85N06	241			1.360	1.360	1.280	1.280	1.280	1d
Worldway Electronics	FQP85N06	10,331	7	Tube		0.080	0.078	0.074	0.074	9h
RC Electronics	FQP85N06	38,922	1		1.716	1.560	1.470	1.340	1.300	>1wk

数据表和文档

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Upverter

Technical Drawing1 页6 年前

IHS

Factory Futures

onsemi

Farnell

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-12-15

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQP85N06 的描述。

Power MOSFET, N-Channel, QFET®, 60 V, 85 A, 10 mΩ, TO-220

onsemi

N-Channel 60 V 10 mO 160 W Flange Mount Mosfet - TO-220

Future Electronics

Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB Rail

Avnet

60V N-CHANNEL MOSFET Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:85A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:300A; Device Marking:FQP85N06; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.01ohm; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor