Infineon IRF1010EPBF

Name: Infineon IRF1010EPBF
Brand: Infineon
SKU: IRF1010EPBF

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 12 Milliohms; ID 84A; TO-220AB; PD 200W; gFS 69S

$ 0.602

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRF1010EPBF	865	50				0.497	0.474	0.474	1d
Newark	2	IRF1010EPBF	18	1		0.206	0.206	0.206	0.206	0.206
Arrow Electronics	2	IRF1010EPBF	180	1		0.935	0.935	0.935	0.935	0.935
Future Electronics	2	IRF1010EPBF	300	50	Tube			0.585	0.570	0.525
Rochester Electronics		IRF1010EPBF	1,175					0.771	0.640	0.570	9h

数据表和文档

下载 Infineon IRF1010EPBF 的数据表和制造商文档。

Farnell

Datasheet8 页15 年前

Datasheet9 页25 年前

Newark

IHS

DigiKey

iiiC

库存历史记录

3 个月趋势:

+93.26%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-08-06

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2014-01-09

LTD Date2014-07-09

描述

由其分销商提供的 Infineon IRF1010EPBF 的描述。

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S

RS (Formerly Allied Electronics)

Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 60 V, 81 A, 0.012 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N Channel Mosfet, 60V, 84A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:84A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF1010EPBF.

Newark

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200

Distrelec

MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC