Infineon IRF1010EZPBF

Name: Infineon IRF1010EZPBF
Brand: Infineon
SKU: IRF1010EZPBF

Mosfet, Power; N-ch; Vdss 60V; Rds(on) 6.8MILLIOHMS; Id 84A; TO-220AB; Pd 140W; -55DEG

$ 0.689

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Avnet	2	63J7168	46	1		2.140	1.530	0.927	0.678	0.593	4d
Newark		IRF1010EZPBF	470	1		2.140	1.040	0.928	0.680	0.680
Arrow Electronics		IRF1010EZPBF	938	1		1.674	0.908	0.885	0.698	0.698
Rutronik		TMOSP11681	150	1					0.474	0.379	7h
DigiKey		IRF1010EZPBF-ND	1,212	1	Tube	2.290	2.290	0.994	0.727	0.727

数据表和文档

下载 Infineon IRF1010EZPBF 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Datasheet13 页15 年前

Datasheet12 页16 年前

Datasheet12 页15 年前

Factory Futures

Newark

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+487%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-10

Lifecycle StatusObsolete (Last Updated: 3 weeks ago)

LTB Date2012-07-27

LTD Date2013-01-27

描述

由其分销商提供的 Infineon IRF1010EZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg

RS (Formerly Allied Electronics)

Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 60V, 84A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:8.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:340A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon