onsemi FDS89161

Name: onsemi FDS89161
Brand: onsemi
SKU: FDS89161

Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

$ 0.828

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Distributor		SKU		Min	Pkg
Rochester Electronics		FDS89161	1,808					0.935	0.776	0.692	2h
DigiKey	3	FDS89161CT-ND	62	1	Cut Tape	2.610	1.675	1.144	0.843	0.843
Verical	2	FDS89161	123	8			0.969	0.812	0.751	0.751
Arrow Electronics		FDS89161	123	1		1.097	0.969	0.812	0.812	0.812
Newark		FDS89161	0	2500	Tape & Reel					1.090

数据表和文档

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Upverter

Technical Drawing1 页6 年前

IHS

Master Electronics

Future Electronics

element14 APAC

库存历史记录

3 个月趋势:

+19.01%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-07-13

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDS89161 的描述。

Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

onsemi

Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ | MOSFET 2N-CH 100V 2.7A 8-SOIC

Win Source

2N-Channel 100 V 2.7 A 105 mOhm Shielded Power Trench Mosfet - SOIC-8

Future Electronics

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Fairchild Semiconductor

MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell