onsemi FDS3612
$ 0.728
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-27
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
相关零件
描述
由其分销商提供的 onsemi FDS3612 的描述。
2.5W(Ta) 4V@ 250¦ÌA 20nC@ 10V 1N 100V 120m¦¸@ 3.4A,10V 632pF@50V SOIC-8
Trans MOSFET N-CH 100V 3.4A 8-Pin SOIC N T/R
MOSFET N-CH 100V 3.4A 8SOIC
Small Signal Field-Effect Transistor, 3.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SMALL SIGNAL N-CHANNEL MOSFET
MISCELLANEOUS MOSFETS;
MOSFETs SO-8
SO8, SINGLE, NCH
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Terminals8
Technical
Continuous Drain Current (ID)3.4 A
Current Rating3.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time4.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance632 pF
Max Operating Temperature175 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max120 mΩ
Rise Time2 ns
Turn-Off Delay Time23 ns
Voltage Rating (DC)100 V