Infineon IRF7495PBF

Name: Infineon IRF7495PBF
Brand: Infineon
SKU: IRF7495PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 18MILLIOHMS; Id 7.3A; SO-8; Pd 2.5W; Vgs +/-20

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7495PBF	0	3800	Bulk					1.080	23h
Farnell	IRF7495PBF	0	5			1.342*	0.500*	0.482*	0.477*	7h
Win Source	WS-IRF7495PBF	9,000	65				0.939	0.626	0.626	8h
Worldway Electronics	IRF7495PBF	17,141	7	Tube		0.189	0.183	0.174	0.174	7h
ICPartonline	IRF7495PBF	21,665			0.718	0.682	0.646	0.610	0.574	3d

数据表和文档

下载 Infineon IRF7495PBF 的数据表和制造商文档。

IHS

Datasheet9 页21 年前

Newark

TME

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-06-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF7495PBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 100 V 22 mOhm 34 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube / MOSFET N-CH 100V 7.3A 8-SOIC

Win Source

2.5W(Ta) 20V 4V@ 250¦ÌA 51nC@ 10 V 1N 100V 22m¦¸@ 4.4A,10V 7.3A 1.53nF@25V SOIC-8 1.75mm

UnikeyIC

100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side

Infineon

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Fall Time tf:36ns; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:58A; Rise Time:13ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC