onsemi FDS89161LZ

Name: onsemi FDS89161LZ
Brand: onsemi
SKU: FDS89161LZ

Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

$ 0.626

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Distributor		SKU		Min	Pkg
Newark	2	FDS89161LZ	5	1	Cut Tape	0.238	0.238	0.238	0.238	0.238
Verical		FDS89161LZ	1,017	10			0.866	0.713	0.626	0.626
Arrow Electronics		FDS89161LZ	1,017	1		1.053	0.866	0.713	0.626	0.626
Future Electronics		FDS89161LZ	7,500	2500	Tape & Reel					0.835
DigiKey	3	FDS89161LZCT-ND	22,284	1	Cut Tape	2.280	1.460	0.989	0.723	0.574

数据表和文档

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JRH Electronics

Datasheet0 页0 年前

Upverter

IHS

onsemi

Future Electronics

库存历史记录

3 个月趋势:

-27.39%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-06-20

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDS89161LZ 的描述。

Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ

onsemi

FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R

Avnet Japan

MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;

Farnell

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Fairchild Semiconductor