供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-05
Lifecycle StatusProduction (Last Updated: 1 week ago)
相关零件
InfineonIRF7853PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
InfineonIRF7493PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
描述
由其分销商提供的 Infineon IRF7853TRPBF 的描述。
Single N-Channel 100 V 18 mOhm 39 nC HEXFET® Power Mosfet - SOIC-8
100V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 Package, SO8, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 8.3A 8-Pin SOIC T/R
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 8.3A, 100V, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0144ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.3 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 18 / Gate-Source Voltage V = 20 / Fall Time ns = 6 / Rise Time ns = 6.6 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max18 mΩ
Resistance18 MΩ
Rise Time6.6 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm