Infineon IRF7380TRPBF

Name: Infineon IRF7380TRPBF
Brand: Infineon
SKU: IRF7380TRPBF

Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8

$ 0.533

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IRF7380TRPBF	8,000	4K						0.355	1d
Newark	2	IRF7380TRPBF	4,797	5	Cut Tape		0.685	0.573	0.479	0.479
Future Electronics	2	IRF7380TRPBF	96,000	4K	Tape & Reel					0.390
DigiKey	3	IRF7380TRPBFCT-ND	8,067	1	Cut Tape	1.950	1.230	0.820	0.587	0.540
Arrow Electronics	2	IRF7380TRPBF	5,035	1		1.105	0.608	0.602	0.464	0.373

数据表和文档

下载 Infineon IRF7380TRPBF 的数据表和制造商文档。

IHS

Datasheet9 页12 年前

element14 APAC

TME

_legacy Avnet

Future Electronics

库存历史记录

3 个月趋势:

-9.70%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-08-10

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRF7380TRPBF 的描述。

Dual N-Channel 80 V 73 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC T/R

Avnet Japan

HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET, DUAL N-CH , 80V, 3.6A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.061ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon