价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FDD86367 | 2,500 | 2500 | Tape & Reel | ||||||||
| Verical | FDD86367 | 3,725 | 50 | |||||||||
| Master Electronics | FDD86367 | 3,740 | 25 | |||||||||
| Onlinecomponents.com | FDD86367 | 3,740 | 25 | Bulk | ||||||||
| Rochester Electronics | FDD86367 | 919 | 1h |
备用零件
Price @ 1000
$ 1.08
$ 0.978
Stock
400,509
330,320
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
TO-252-3
Drain to Source Voltage (Vdss)
80 V
80 V
Continuous Drain Current (ID)
100 A
100 A
Threshold Voltage
-
-
Rds On Max
-
4.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
227 W
227 W
Input Capacitance
-
4.84 nF
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDD86367 的描述。
PowerTrench® MOSFET, N-Channel, 80 V, 100 A, 4.2 mΩ
Mosfet, N-Ch, 80V, 100A, To-252 Rohs Compliant: Yes |Onsemi FDD86367
227W(Tj) 20V 4V@ 250¦ÌA 88nC@ 10 V 1N 80V 4.2m¦¸@ 80A,10V 100A 4.84nF@40V D-PAK,TO-252 2.52mm
N-Channel PowerTrench MOSFET 80V 100A 0.0042Ohm 3-Pin DPAK T/R
Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 100A I(D), 80V, 0.0042ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252AA
MOSFET N-CHANNEL 80V 100A TO252
MV7 80/20V 1000A N-CHANNEL POWER
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation227 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation227 W
Turn-Off Delay Time36 ns
Turn-On Delay Time20 ns