供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-01-28
Lifecycle StatusEOL (Last Updated: 21 hours ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 21 hours ago)
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描述
由其分销商提供的 onsemi FDC855N 的描述。
N-Channel, PowerTrench® MOSFET, Logic Level, 30V, 6.1A, 27mΩ
30V 6.1A 1.6W 27m´Î@10V6.1A 3V@250Ã×A N Channel TSOT-23-6 MOSFETs ROHS
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
Power Field-Effect Transistor, 6.1A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
MOSFET, N CH, 30V, 0.0207OHM, 6.1A, SUPE
onsemi NChannel EnhancedMOSTube PowerTrenchseries, Vds=30 V, 6.1 A, SOT-23encapsulation, surface mount, 6Pin
Fet 30V 27.0 Mohm Ssot6 Rohs Compliant: Yes
MOSFET N-CH 30V 6.1A SUPERSOT6
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Semiconductor’s advanced PowerTrench® process, this device possesses minimized on-state resistance to optimize the power consumption. They are ideal for applications where in-line power loss is critical.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.1 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance655 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation800 mW
Rds On Max27 mΩ
Resistance27 MΩ
Rise Time2 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time6 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm