由其分销商提供的 onsemi FDC653N 的描述。
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ
1.6W(Ta) 20V 2V@ 250¦ÌA 17nC@ 10 V 1N 30V 35m¦¸@ 5A,10V 5A 350pF@15V 2.9mm*1.6mm*1mm
Trans MOSFET N-CH 30V 5A 6-Pin SuperSOT T/R
Avnet Japan
ON SEMICONDUCTOR - FDC653N - Power MOSFET, N Channel, 30 V, 5 A, 0.035 ohm, SuperSOT, Surface Mount
30V N-Fet 35 Mo Ssot6 Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDC653N,006, PLASTIC MOLDED, S UPER SOT-6 PKG, SINGLE, SMD (
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.