供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
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N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
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Single N-Channel 30 V 42 mOhm 11.4 nC 1.75 W Silicon SMT Mosfet - TSOT-26
描述
由其分销商提供的 onsemi FDC653N 的描述。
N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ
MOSFET N-Ch 20V 2V@250µA 17nC@10V 30V 35mΩ@5A,10V 5A 350pF@15V 1.6W(Ta) SMD 2.9mm × 1.6mm × 1mm
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight30 mg
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.6 W
Rds On Max35 mΩ
Resistance35 MΩ
Rise Time12 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.7 V
Turn-Off Delay Time13 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)30 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm