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描述
由其分销商提供的 STMicroelectronics STT6N3LLH6 的描述。
N-channel 30 V, 0.021 Ohm, 6 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in SOT23-6L package
STT6N3LLH6 N-channel MOSFET Transistor, 6 A, 30 V, 6-Pin SOT-23
Power MOSFET, N Channel, 30 V, 6 A, 0.021 ohm, SOT-23, Surface Mount
MOSFET, N-CH, 30V, 6A, 1.6W, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Po
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance283 pF
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max25 mΩ
Rise Time11.2 ns
Turn-Off Delay Time9.4 ns
Turn-On Delay Time4.8 ns
Dimensions
Height1.3 mm
Length3.05 mm
Width1.75 mm