供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
描述
由其分销商提供的 onsemi FDC8886 的描述。
N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
1.6W(Ta) 20V 3V@ 250µA 7.4nC@ 10V 1individualNChannel 30V 23mΩ@ 6.5A,10V 6.5A，8A 465pF@15V TSOT-23-6 SMD mount 2.9mm*1.6mm*1.1mm
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance465 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.6 W
Rds On Max23 mΩ
Rise Time1 ns
Schedule B8541290080
Turn-Off Delay Time11 ns
Turn-On Delay Time5 ns
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm