供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-03-24
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDC655BN 的描述。
Transistor MOSFET N Channel 30 Volt 6.3 .6 Amp 6 Pin Supersot Tape and Reel
N-Channel PowerTrench® MOSFET, Logic Level, 30 V, 6.3 A, 25 mΩ
Temperature Sensors - NTC Thermistors Tape & Reel (TR) 0201 (0603 Metric) 1% 1 (Unlimited) 10k Surface Mount ±1% -40°C~125°C Thermistor NTC 10K Ohm 1% 2-Pin 0201 Surface Mount Solder Pad 3435K T/R
MOSFET, N CH, 30V, 6.3A, SUPERSOT; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V;
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-6
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight36 mg
Technical
Continuous Drain Current (ID)6.3 A
Current Rating6.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation800 mW
Rds On Max25 mΩ
Resistance25 MΩ
Rise Time4 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)30 V
Dimensions
Height1.1 mm
Length3 mm
Width1.7 mm