onsemi FDB120N10

Name: onsemi FDB120N10
Brand: onsemi
SKU: FDB120N10

N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

$ 1.71

EOL

数据表

制造商页面

价格与库存

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分销商

SKU

最小

Pkg

批量定价

13h

800

Tape & Reel

USD

Cut Tape

USD

Tape & Reel

USD

Weyland Electronics Group Pte. Ltd.

FDB120N10

2,631

Tape & Reel

USD

数据表和文档

下载 onsemi FDB120N10 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Datasheet0 页0 年前

Master Electronics

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-0.08%

CAD 模型

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供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-06-13

Lifecycle StatusEOL (Last Updated: 2 days ago)

LTB Date2026-01-01

LTD Date2026-07-01

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

描述

由其分销商提供的 onsemi FDB120N10 的描述。

N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

onsemi

Power Field-Effect Transistor, 74A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

170W(Tc) 20V 4.5V@ 250µA 86nC@ 10 V 1individualNChannel 100V 12mΩ@ 74A,10V 74A 5.605nF@25V D2PAK，TO-263 SMD mount 5.08mm(height)

UnikeyIC

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Fairchild Semiconductor

图片

element14 APAC

Rochester Electronics

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

技术规格

Physical

Case/PackageD2PAK

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight1.31247 g

Technical

Continuous Drain Current (ID)74 A

Drain to Source Breakdown Voltage100 V

Drain to Source Resistance12 mΩ

Drain to Source Voltage (Vdss)100 V

Element ConfigurationSingle

Fall Time15 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance5.605 nF

Max Operating Temperature175 °C

Max Power Dissipation170 W

Min Breakdown Voltage100 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation170 W

Rds On Max12 mΩ

Rise Time105 ns

Schedule B8541290080

Turn-Off Delay Time39 ns

Turn-On Delay Time27 ns

Dimensions

Height4.83 mm

Length10.67 mm

Width9.65 mm

数据表和文档

下载 onsemi FDB120N10 的数据表和制造商文档。