STMicroelectronics STB80NF10T4

Name: STMicroelectronics STB80NF10T4
Brand: STMicroelectronics
SKU: STB80NF10T4

N-channel 100V - 0.012 Ohm - 80A - D2PAK Low Gate Charge Stripfet(tm) Mosfet

$ 1.217

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Distributor		SKU		Min	Pkg
Future Electronics	3	STB80NF10T4	1,000	1K	Tape & Reel				1.250	1.220
Verical	2	STB80NF10T4	3,000	1K					0.832	0.832
Arrow Electronics	2	STB80NF10T4	24,000	1K					1.287	1.287
DigiKey	3	497-2489-1-ND	807	1	Cut Tape	3.840	2.509	1.752	1.431	1.431
TME	2	STB80NF10T4	61	1		2.720	1.860	1.500	1.140	0.990	9h

数据表和文档

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Factory Futures

Datasheet14 页20 年前

element14 APAC

Farnell

Newark

iiiC

库存历史记录

3 个月趋势:

-1.76%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB80NF10T4 的描述。

N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET

STMicroelectronics

STB80NF10T4 N-CHANNEL MOSFET TRANSISTOR, 80 A, 100 V, 3-PIN D2PAK

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 100 V, 40 A, 0.012 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC