Infineon IRF2807ZSTRLPBF

Name: Infineon IRF2807ZSTRLPBF
Brand: Infineon
SKU: IRF2807ZSTRLPBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 7.5MILLIOHMS; Id 75A; D2PAK; Pd 170W; Vgs +/-20

$ 1.11

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF2807ZSTRLPBF	27,268					1.340	1.110	0.992	5h
Future Electronics		IRF2807ZSTRLPBF	0	800	Tape & Reel				0.930	0.880
RS (Formerly Allied Electronics)		IRF2807ZSTRLPBF	0	10	Bulk		2.520	2.220	2.220	2.220	22h
Farnell	2	IRF2807ZSTRLPBF	0	1	Cut Tape	3.109*	2.086*	2.086*	2.086*	2.086*	5h
Microchip USA		IRF2807ZSTRLPBF	2,054	600					2.544	2.544	23h

数据表和文档

下载 Infineon IRF2807ZSTRLPBF 的数据表和制造商文档。

IHS

Datasheet13 页15 年前

Datasheet12 页15 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

库存历史记录

3 个月趋势:

Restocked

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InfineonIRF2807ZSTRLPBF

Price @ 1000

$ 1.11

Stock

260,652

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

Rds On Max

9.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

170 W

Input Capacitance

3.27 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-04-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRF2807ZSTRLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 75A;D2Pak;PD 170W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 75V 9.4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 75V 89A 3-Pin(2+Tab) D2PAK T/R

Verical

Advanced Process Technology | MOSFET N-CH 75V 75A D2PAK

Win Source

Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0075Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon