供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-18
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
相关零件
InfineonIRFS4410TRLPBF
INFINEON IRFS4410TRLPBF MOSFET Transistor, N Channel, 88 A, 100 V, 0.008 ohm, 10 V, 4 VNew
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Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
STMicroelectronicsSTB120NF10T4
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in D2PAK package
STMicroelectronicsSTB75NF75T4
N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in D2PAK package
描述
由其分销商提供的 Infineon IRFS4410PBF 的描述。
Single N-Channel 100 V 10 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 8 Milliohms;ID 88A;D2Pak;PD 200W;VGS +/-20V
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
N-Ch MOSFET, 200W(Tc), 20V, 4V@150μA, 180nC@10V, 100V, 10mΩ@58A,10V, 88A, 5.15nF@50V, D2PAK, SMD, 6.5mm × 6.22mm × 2.3mm
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance10 mΩ
Package Quantity1000
Power Dissipation250 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time80 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time24 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm