供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-05
Lifecycle StatusProduction (Last Updated: 3 months ago)
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描述
由其分销商提供的 STMicroelectronics STB75NF75LT4 的描述。
N-Channel 75V - 0.009Ohm - 75A - D2PAK StripFET(TM) II POWER MOSFET
STB75NF75LT4 N-CHANNEL MOSFET TRANSISTOR, 75 A, 75 V, 3-PIN D2PAK
Trans MOSFET N-CH 75V 75A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 75V, 75A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37.5A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage Vgs:15V; Threshold Voltage Vgs:2.5V; Pow
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)15 V
Input Capacitance4.3 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max11 mΩ
Resistance11 mΩ
Rise Time155 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time110 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)75 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm