onsemi FCD380N60E

Name: onsemi FCD380N60E
Brand: onsemi
SKU: FCD380N60E

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK

$ 1.16

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Distributor		SKU		Min	Pkg
Avnet	2	08AK5998	2,356	1		3.250	2.110	1.900	1.900	1.900	1d
Newark	2	FCD380N60E	2,356	1	Cut Tape	0.873	0.873	0.873	0.873	0.873
Verical	3	FCD380N60E	2,220	215					1.450	1.300
Arrow Electronics		FCD380N60E	720	1		0.856	0.856	0.856	0.856	0.856
Rochester Electronics		FCD380N60E	2,936					1.400	1.160	1.040	2h

数据表和文档

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Master Electronics

Datasheet0 页0 年前

Upverter

IHS

onsemi

Future Electronics

库存历史记录

3 个月趋势:

-59.29%

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供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCD380N60E 的描述。

N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK

onsemi

106W(Tc) 20V 3.5V@ 250¦ÌA 45nC@ 10V 2N 600V 380m¦¸@ 5A,10V 10.2A 1.77nF@ 25V DPAK-3 2.52mm

UnikeyIC

N-CHANNEL SUPERFET II EASY-DRIVE MOSFET Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N-CH, 600V, 10.2A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5

Farnell

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor