价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STD13NM60N | 25,000 | 2500 | Tape & Reel | ||||||||
| Avnet | 33X1194 | 220 | 1 | 5d | ||||||||
| Newark | STD13NM60N | 220 | 1 | Cut Tape | ||||||||
| Verical | STD13NM60N | 37,500 | 2500 | |||||||||
| Arrow Electronics | STD13NM60N | 37,500 | 2500 |
备用零件
Price @ 1000
$ 1.47
$ 2.276
Stock
1,497,180
271,846
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
11 A
11 A
Threshold Voltage
3 V
-
Rds On Max
360 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
90 W
109 W
Input Capacitance
790 pF
845 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-23
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-10
LTD Date2027-03-10
相关零件
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STMicroelectronicsSTD13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
描述
由其分销商提供的 STMicroelectronics STD13NM60N 的描述。
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
STD13NM60N N-CHANNEL MOSFET TRANSISTOR, 11 A, 650 V, 3-PIN TO-252
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 600V, 11A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation90 W
Rds On Max360 mΩ
Resistance360 mΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height2.63 mm
Length6.6 mm
Width6.2 mm