STMicroelectronics STD13N60M2

Name: STMicroelectronics STD13N60M2
Brand: STMicroelectronics
SKU: STD13N60M2

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

$ 0.65

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Distributor		SKU		Min	Pkg
Newark		STD13N60M2	359	1	Cut Tape	1.920	1.290	0.927	0.722	0.722
Verical	2	STD13N60M2	40,000	2500						0.455
Arrow Electronics	2	STD13N60M2	970	1		0.579	0.579	0.579	0.579	0.579
TME	2	STD13N60M2	1,703	1		1.954*	1.306*	1.306*	1.306*	1.306*	16h
DigiKey	2	497-13862-1-ND	833	1	Cut Tape	1.850	1.173	0.786	0.567	0.567

数据表和文档

下载 STMicroelectronics STD13N60M2 的数据表和制造商文档。

STMicroelectronics

Datasheet21 页13 年前

Future Electronics

库存历史记录

3 个月趋势:

-11.18%

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供应链

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics STD13N60M2 的描述。

N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package

STMicroelectronics

STD13N60M2 N-channel MOSFET Transistor, 11 A, 650 V, 3-Pin DPAK

RS (Formerly Allied Electronics)

MOSFET N-CH 600V 11A DPAK / Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R

Win Source

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N-CH, 600V, 11A, 110W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 110W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell