供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-08-02
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
STMicroelectronicsSTD10N60M2
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in DPAK package
STMicroelectronicsSTD10NM65N
N-channel 650 V, 0.43 Ohm, 9 A, DPAK second generation MDmesh(TM) Power MOSFET
描述
由其分销商提供的 onsemi FCD620N60ZF 的描述。
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 600 V, 7.3 A, 620 mΩ, DPAK
N-Channel 600 V 620 mOhm 36 nC Surface Mount Mosfet - TO-252
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.62ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)7.3 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance620 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.135 nF
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Rds On Max620 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Dimensions
Height6.22 mm
Length6.73 mm
Width2.39 mm