onsemi FCD600N60Z

Name: onsemi FCD600N60Z
Brand: onsemi
SKU: FCD600N60Z

N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, DPAK

$ 1.008

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Distributor		SKU		Min	Pkg
Verical		FCD600N60Z	1,070	7			1.008	0.977	0.929	0.929
Arrow Electronics		FCD600N60Z	1,070	1		1.024	1.008	0.977	0.929	0.929
Rochester Electronics		FCD600N60Z	19,300					1.160	0.963	0.858	23h
DigiKey	3	FCD600N60ZCT-ND	15,045	1	Cut Tape	3.040	1.969	1.356	1.042	1.042
Flip Electronics		FCD600N60Z	778								6d

数据表和文档

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Master Electronics

Datasheet0 页0 年前

Upverter

IHS

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-28.86%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-10

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FCD600N60Z 的描述。

N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, DPAK

onsemi

Power Field-Effect Transistor, 7.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH, 600V, 7.4A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.51ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

Farnell

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor