备用零件
Price @ 1000
$ 2.31
$ 0.625
Stock
528,640
1,649,965
Authorized Distributors
1
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-
1 V
Rds On Max
19 mΩ
19 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
69 W
69 W
Input Capacitance
1.6 nF
1.6 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
相关零件
InfineonIRLR3103TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W
InfineonIRFR3707PBF
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STMicroelectronicsSTD40NF3LLT4
N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET
描述
由其分销商提供的 Infineon IRLR3103PBF 的描述。
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:55A; On Resistance, Rds(on):19mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
MOSFET, N, 30V, 46A, D-PAK; Transistor type:MOSFET; Voltage, Vds typ:30V; Current, Id cont:45A; Resistance, Rds on:0.019ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:1V; Case style:D-PAK (TO-252); Case style, alternate:D-PAK; Current, Idm pulse:69A; Marking, SMD:IRLR3103; Power dissipation:69W; Power, Pd:69W; Resistance, Rds on @ Vgs = 10V:0.019ohm; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Thermal resistance, junction to case a:1.8°C/W; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V; Voltage, Vgs th min:1V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating55 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements1
On-State Resistance19 mΩ
Package Quantity3000
Power Dissipation69 W
Rds On Max19 mΩ
Recovery Time78 ns
Resistance19 mΩ
Rise Time210 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)30 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm