价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | STD40NF3LLT4 | 333 | 3500 | Tray | 9h | |||||||
| Win Source | WS-STD40NF3LLT4 | 6,350 | 55 | 17h | ||||||||
| Worldway Electronics | STD40NF3LLT4 | 24,988 | 7 | Tape & Reel | 16h | |||||||
| GreenTree Electronics | STD40NF3LLT4 | 5,000 | 14h | |||||||||
| Aztech | STD40NF3LLT4 | 9,644 | 12h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2020-10-02
LTD Date2021-04-02
相关零件
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InfineonIPD40N03S4L08ATMA1
30V, N-Ch, 8.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS
InfineonIPD30N03S2L10ATMA1
30V, N-Ch, 10 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
描述
由其分销商提供的 STMicroelectronics STD40NF3LLT4 的描述。
N-CHANNEL 30V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET
N-Channel 30 V 11 mOhm Surface Mount StripFET II Power Mosfet - DPAK
Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
Power MOSFET Transistors N-Ch 30 Volt 40 Amp
80W(Tc) 16V 1V@ 250¦ÌA 33nC@ 4.5 V 1N 30V 11m¦¸@ 20A,10V 40A 1.65nF@25V DPAK,TO-252-3 6.6mm*6.2mm*2.4mm
Power Field-Effect Transistor, 40A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ptd High Voltage |Stmicroelectronics STD40NF3LLT4
Power MOSFETs, 30V, 40A, DPAK, Tape and Reel
STMicroelectronics SCT
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.65 nF
Max Operating Temperature175 °C
Max Power Dissipation55 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation80 W
Rds On Max11 mΩ
Rise Time156 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)30 V