Infineon IRLR3103TRPBF

Name: Infineon IRLR3103TRPBF
Brand: Infineon
SKU: IRLR3103TRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.019 Ohm; Id 55A; D-pak (TO-252AA); Pd 107W

$ 0.625

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRLR3103TRPBF	310					0.566	0.470	0.419	19h
RS (Formerly Allied Electronics)		IRLR3103TRPBF	0	10	Bulk		0.880	0.780	0.780	0.780	7h
Component Stockers USA		IRLR3103TRPBF	25,150			0.940	0.920	0.890	0.870	0.870	>1wk
Win Source	2	WS-IRLR3103	719	85				0.622	0.415	0.415	19h
Worldway Electronics	3	IRLR3103TRPBF	11,582	7	Tape & Reel		0.662	0.650	0.625	0.612	18h

数据表和文档

下载 Infineon IRLR3103TRPBF 的数据表和制造商文档。

Newark

Datasheet11 页21 年前

IHS

DigiKey

Sierra IC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+0.00%

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InfineonIRLR3103TRPBF

InfineonIRLR3103PBF

Price @ 1000

$ 0.625

$ 2.31

Stock

1,102,227

83,491

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

20 A

Threshold Voltage

1 V

Rds On Max

19 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

69 W

Input Capacitance

1.6 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-08-07

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2009-08-19

LTD Date2010-02-19

描述

由其分销商提供的 Infineon IRLR3103TRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.019Ohm;ID 55A;D-Pak (TO-252AA);PD 107W

RS (Formerly Allied Electronics)

Single N-Channel 30 V 0.019 Ohm 50 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:55A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

Newark

MOSFET, N LOGIC D-PAK; Transistor type:MOSFET; Current, Id cont:45A; Resistance, Rds on:0.019ohm; Case style:TO-252 (D-Pak); Current, Idm pulse:69A; Marking, SMD:IRLR3103; Power dissipation:69W; Power, Pd:69W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:SMD; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds max:30V; Voltage, Vgs th max:2V

Farnell