价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML5103TRPBF | 300,000 | 3K | 2d | ||||||||
| Newark | IRLML5103TRPBF | 15,531 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLML5103TRPBF | 26,726 | 1 | |||||||||
| Future Electronics | IRLML5103TRPBF | 741,000 | 3K | Tape & Reel | ||||||||
| Rutronik | TMOSS6808 | 3,000 | 3K | 8h |
备用零件
Price @ 1000
$ 0.125
$ 0.186
Stock
16,191,464
153,429
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
540 mA
760 mA
Threshold Voltage
-1 V
-
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
340 mW
540 mW
Input Capacitance
75 pF
75 pF
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
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Transistor: N-MOSFET; unipolar; 30V; 2.8A; 0,07ohm;1.4W; -55+150 st.C; SMD; SOT23
描述
由其分销商提供的 Infineon IRLML5103TRPBF 的描述。
INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.6Ohm;ID -0.76A;Micro3;PD 540mW;VGS +/-20V
-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single P-Channel 30 V 1 Ohm 5.1 nC HEXFET® Power Mosfet - SOT-23
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Power dissipation: 540 mW
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel Mosfet, -30V, 760Ma, Sot-23; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:760Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon Technologies IRLML5103TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)540 mA
Current Rating-610 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance75 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation280 mW
Manufacturer Package IdentifierMicro(SOT23)
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1 V
Number of Elements1
On-State Resistance600 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation340 mW
Rds On Max600 mΩ
Resistance600 mΩ
Rise Time8.2 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1 V
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm