Infineon IRLML2803TRPBF

Name: Infineon IRLML2803TRPBF
Brand: Infineon
SKU: IRLML2803TRPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.25 Ohm; Id 1.2A; MICRO3; Pd 540MW; Vgs +/-20V

$ 0.115

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		IRLML2803TRPBF	54,000	3K						0.054	22h
Newark	3	IRLML2803TRPBF	5,325	1	Cut Tape	0.433	0.259	0.163	0.122	0.122
Future Electronics	3	IRLML2803TRPBF	201,000	3K	Tape & Reel					0.077
Rochester Electronics		IRLML2803TRPBF	14					0.074	0.062	0.055	20h
DigiKey	3	IRLML2803PBFCT-ND	164,083	1	Cut Tape	0.500	0.304	0.191	0.127	0.127

数据表和文档

下载 Infineon IRLML2803TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页12 年前

Datasheet9 页19 年前

Datasheet8 页14 年前

Newark

Upverter

element14 APAC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+171%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1995-07-01

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRLML2803TRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-20V

RS (Formerly Allied Electronics)

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 30 V, 850 mA, 0.25 ohm, SOT-23, Surface Mount

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW

Distrelec

HEXFET Power MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

ComSIT Distribution GmbH

N Channel Mosfet, 30V, 1.2A, Sot-23; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:850Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRLML2803TRPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.4W; Power, Pd:0.4W; Quantity, Reel:3000; SMD Marking:1B; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.5V; Width, External:3.05mm; Width, Tape:8mm

Farnell