备用零件
Price @ 1000
$ 2.7
$ 0.735
Stock
192,430
94,365
Authorized Distributors
1
2
Mount
Surface Mount
Surface Mount, Through Hole
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
76 A
76 A
Threshold Voltage
-
-
Rds On Max
8.4 mΩ
8.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
125 W
125 W
Input Capacitance
4.02 nF
4.02 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
相关零件
InfineonIRFS7762TRLPBF
MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3
onsemiHUF75345S3S
75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 55V 75A D2PAK
描述
由其分销商提供的 Infineon IRFS7787TRLPBF 的描述。
MOSFET, 75V, 76A, 8.4 mOhm, 73 nC, D2PAK, TAPE & REEL LEFT
MOSFET N-CH 75V 76A D2PAK / Trans MOSFET N-CH 75V 76A 3-Pin(2+Tab) D2PAK T/R
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
MOSFET, N-CH, 75V, 76A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 76A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0069ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)76 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance8.4 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.4 mΩ
Package Quantity800
Power Dissipation125 W
Rds On Max8.4 mΩ
Rise Time48 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time11 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm