供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29
描述
由其分销商提供的 STMicroelectronics STB76NF75 的描述。
N-channel 75 V, 0.0095 Ohm typ., 80 A STripFET(TM) II Power MOSFET in D2PAK package
Trans MOSFET N-CH 75V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max11 mΩ
Rise Time100 ns
Turn-Off Delay Time66 ns
Turn-On Delay Time25 ns