Infineon IRFS7762TRLPBF

Name: Infineon IRFS7762TRLPBF
Brand: Infineon
SKU: IRFS7762TRLPBF

MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3

$ 1.83

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRFS7762TRLPBF	760					1.270	1.050	0.940	1h
RS (Formerly Allied Electronics)		IRFS7762TRLPBF	0	5	Bulk		2.890	2.610	2.610	2.610	17h
Farnell	2	IRFS7762TRLPBF	0	1	Cut Tape	0.736*	0.736*	0.736*	0.736*	0.736*	1d
Win Source		WS-IRFS7762TRLPBF	20,000	30				1.655	1.346	1.346	2h
Worldway Electronics		IRFS7762TRLPBF	13,446	7	Tape & Reel		0.324	0.314	0.297	0.297	29m

数据表和文档

下载 Infineon IRFS7762TRLPBF 的数据表和制造商文档。

IHS

Datasheet13 页11 年前

Datasheet12 页11 年前

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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InfineonIRFS7762TRLPBF

InfineonIRFS7762PBF

Price @ 1000

$ 1.83

$ 1.299

Stock

54,538

38,762

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

85 A

Threshold Voltage

Rds On Max

6.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

4.44 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-08-20

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-11-30

LTD Date2022-05-31

描述

由其分销商提供的 Infineon IRFS7762TRLPBF 的描述。

MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3

Win Source

Single N-Channel 75 V 6.7 mOhm 85 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

TAPE AND REEL / MOSFET, 75V, 104A, 6.3 Ohm, 88 nC, D2PAK

Newark

Trans MOSFET N-CH 75V 85A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 85A I(D), 75V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 75V, 85A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P

Farnell

Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET

Infineon