Infineon IRFR4510TRPBF

Name: Infineon IRFR4510TRPBF
Brand: Infineon
SKU: IRFR4510TRPBF

Transistor, Hexfet Power Mosfet, N-channel, 100V , 63A, 13.9MOHM Max, D-pak

$ 0.723

Obsolete

制造商页面数据表

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFR4510TRPBF	5,295	1		0.752	0.752	0.752	0.752	0.752
Rochester Electronics		IRFR4510TRPBF	11,500					0.799	0.663	0.591	19h
Future Electronics		IRFR4510TRPBF	0	2K	Tape & Reel					0.480
RS (Formerly Allied Electronics)		IRFR4510TRPBF	0	2K	Bulk					1.550	12h
Avnet		IRFR4510TRPBF	0	2K							2d

数据表和文档

下载 Infineon IRFR4510TRPBF 的数据表和制造商文档。

IHS

Datasheet11 页14 年前

Newark

库存历史记录

3 个月趋势:

-14.54%

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InfineonIRFR4510TRPBF

InfineonIRFR4510PBF

Price @ 1000

$ 0.723

$ 0.8

Stock

557,610

127,107

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

3 V

Rds On Max

13.9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

143 W

Input Capacitance

3.031 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2012-05-02

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR4510TRPBF 的描述。

TRANSISTOR, HEXFET POWER MOSFET, N-CHANNEL, 100V , 63A, 13.9MOHM MAX, D-PAK

RS (Formerly Allied Electronics)

Single N-Channel 100 V 13.9 mOhm 54 nC HEXFET® Power Mosfet - TO-252-3

Future Electronics

Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R / MOSFET N CH 100V 56A DPAK

Win Source

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 56A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH, 100V, 63A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0111ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:143W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Farnell

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 63 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 13.9 / Gate-Source Voltage V = 20 / Fall Time ns = 34 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 42 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 143

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