Infineon IPD60N10S4L12ATMA1

Name: Infineon IPD60N10S4L12ATMA1
Brand: Infineon
SKU: IPD60N10S4L12ATMA1

IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313

$ 0.636

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Distributor		SKU		Min	Pkg
Newark	2	IPD60N10S4L12ATMA1	403	1	Cut Tape	0.635	0.635	0.635	0.635	0.635
Arrow Electronics		IPD60N10S4L12ATMA1	4,728	1		0.601	0.601	0.601	0.601	0.601
DigiKey	3	IPD60N10S4L12ATMA1CT-ND	39,086	1	Cut Tape	2.190	1.399	0.946	0.690	0.690
Avnet		IPD60N10S4L12ATMA1	0	2500						0.505	3h
Future Electronics		IPD60N10S4L12ATMA1	0	2500	Tape & Reel					0.565

数据表和文档

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IHS

Datasheet9 页14 年前

库存历史记录

3 个月趋势:

+14.08%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-11-30

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD60N10S4L12ATMA1 的描述。

IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313

Future Electronics

100V, N-Ch, 12 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Mosfet, N-Ch, 100V, 60A, 175Deg C, 94W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon Technologies IPD60N10S4L12ATMA1

Newark

Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

Infineon