备用零件
Price @ 1000
$ 1.666
$ 0.394
Stock
134,059
39,503
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount, Through Hole
Case/Package
TO-252-3
DPAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
11.2 mΩ
11.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
99 W
99 W
Input Capacitance
3.107 nF
3.107 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-19
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
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描述
由其分销商提供的 Infineon IRFR7746TRPBF 的描述。
75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS
Infineon SCT
Single N-Channel 75 V 11.2 Ohm 59 nC HEXFET® Power Mosfet - DPAK
Power Field-Effect Transistor, 56A I(D), 75V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 75V, 56A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095oh; Available until stocks are exhausted Alternative available
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance11.2 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.107 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation99 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance11.2 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation99 W
Rds On Max11.2 mΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time34 ns
Turn-On Delay Time7.9 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm