Infineon IPD60N10S412ATMA1

Name: Infineon IPD60N10S412ATMA1
Brand: Infineon
SKU: IPD60N10S412ATMA1

Mosfet, N-Ch, 100V, 60A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60N10S412ATMA1

$ 0.688

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Distributor		SKU		Min	Pkg
Newark		IPD60N10S412ATMA1	4,132	1	Cut Tape	2.120	1.350	0.916	0.688	0.688
Arrow Electronics	3	IPD60N10S412ATMA1	21,998	1		0.704	0.704	0.704	0.704	0.704
Rochester Electronics		IPD60N10S412ATMA1	78,561					0.742	0.615	0.549	21h
DigiKey	3	448-IPD60N10S412ATMA1CT-ND	3,858	1	Cut Tape	2.200	1.406	0.951	0.694	0.694
Avnet		IPD60N10S412ATMA1	0	2500						0.575	2d

数据表和文档

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IHS

Datasheet9 页11 年前

库存历史记录

3 个月趋势:

+35.35%

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供应链

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-06-30

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

描述

由其分销商提供的 Infineon IPD60N10S412ATMA1 的描述。

Mosfet, N-Ch, 100V, 60A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60N10S412ATMA1

Newark

MOSFET N-CH 100V 60A TO252-3 / N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313

Win Source

100V, N-Ch, 12.2 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 60A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 60A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

Summary of Features: N-channel - Normal Level - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested

Infineon