Infineon IRFR1205TRLPBF

Name: Infineon IRFR1205TRLPBF
Brand: Infineon
SKU: IRFR1205TRLPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.027 Ohm; Id 44A; D-pak (TO-252AA); Pd 107W

$ 0.559

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IRFR1205TRLPBF	1,599					0.636	0.528	0.471	14h
RS (Formerly Allied Electronics)	IRFR1205TRLPBF	0	3K	Bulk					1.382	3h
Mouser	942-IRFR1205TRLPBF	5,300	1	Tape & Reel	1.950	1.240	0.824	0.591	0.537
Verical	IRFR1205TRLPBF	1,599	472					0.660	0.588
Win Source	WS-IRFR1205TRLPBF	2,490	5			12.442	8.295	8.295	8.295	14h

数据表和文档

下载 Infineon IRFR1205TRLPBF 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

Datasheet11 页21 年前

RS (Formerly Allied Electronics)

Future Electronics

Newark

库存历史记录

3 个月趋势:

-49.04%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR1205TRLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W

RS (Formerly Allied Electronics)

Single N-Channel 55V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:44A; On Resistance, Rds(on):27mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Newark