Infineon IRLR2905PBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 42 A, TO-252, IRLR2905-PBF

Single N-Channel 55 V 0.027 Ohm 48 nC HEXFET® Power Mosfet - TO-252AA

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

MOSFET, N, 55V, 36A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:55V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:69W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:27mohm; Package / Case:DPAK; Power Dissipation Pd:69W; Power Dissipation Pd:69W; Pulse Current Idm:160A; SMD Marking:IRLR2905; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V