Infineon IRLR2905TRPBF

Name: Infineon IRLR2905TRPBF
Brand: Infineon
SKU: IRLR2905TRPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.027 Ohm; Id 42A; D-pak (TO-252AA); Pd 110W

$ 0.575

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Distributor		SKU		Min	Pkg
Avnet		IRLR2905TRPBF	54,000	2K						0.385	2d
Newark	2	IRLR2905TRPBF	10,005	1	Cut Tape	1.830	1.130	0.781	0.699	0.699
Arrow Electronics	3	IRLR2905TRPBF	13,831	1		0.417	0.417	0.417	0.417	0.417
Future Electronics	2	IRLR2905TRPBF	20,000	2K	Tape & Reel					0.460
Rochester Electronics		IRLR2905TRPBF	3,733					0.606	0.503	0.448	23h

数据表和文档

下载 Infineon IRLR2905TRPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Newark

Upverter

DigiKey

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-1.62%

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InfineonIRLR2905TRPBF

InfineonAUIRLR2905

Price @ 1000

$ 0.575

$ 3.46

Stock

1,386,702

97,236

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

20 A

42 A

Threshold Voltage

2 V

1 V

Rds On Max

27 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

69 W

110 W

Input Capacitance

1.7 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-03-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRLR2905TRPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W

RS (Formerly Allied Electronics)

Single N-Channel 55 V 110 W 48 nC Hexfet Power Mosfet Surface Mount -TO-252AA

Future Electronics

In a Tube of 75, N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF

AAA CHIPS

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:36A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes

Newark

N CHANNEL MOSFET, 55V, 42A, D-PAK; Trans; N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 16 / Fall Time ns = 15 / Rise Time ns = 84 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110

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