供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRFR3806PBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12.6 Milliohms;ID 43A;D-Pak;PD 71W;VGS +/-20
InfineonAUIRFR3806
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
VishaySQD30N05-20L_GE3
VISHAY SQD30N05-20L -GE3 MOSFET Transistor, N Channel, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
描述
由其分销商提供的 onsemi FDD5680 的描述。
N-Channel 60 V 21 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Trans MOSFET N-CH 60V 38A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 8.5A D-PAK
N-Channel PowerTrench® MOSFET, 38A, 21mΩ
Power Field-Effect Transistor, 38A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.4V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)38 A
Current Rating38 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.835 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.3 W
Rds On Max21 mΩ
Resistance21 mΩ
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)60 V
Dimensions
Height2.517 mm