备用零件
Price @ 1000
$ 140.14
$ 108
$ 108
Stock
5,035
13,906
13,906
Authorized Distributors
2
1
1
Mount
Through Hole
Through Hole
Through Hole
Case/Package
-
-
-
Drain to Source Voltage (Vdss)
100 V
-
-
Continuous Drain Current (ID)
34 A
34 A
34 A
Threshold Voltage
-
-
-
Rds On Max
-
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
150 W
150 W
150 W
Input Capacitance
-
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Infineon IRFM150 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single N-Channel 100 V 150 W 0.07 nC Hexfet Power Mosfet Flange Mount - TO-254AA
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3
Infineon SCT
Trans MOSFET N-CH 100V 34A 3-Pin(3+Tab) TO-254AA
Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance100 mΩ
Power Dissipation150 W