备用零件
Price @ 1000
$ 25.02
$ 27.265
Stock
24,858
13,561
Authorized Distributors
1
2
Mount
Through Hole
Through Hole
Case/Package
TO-3
TO-3
Drain to Source Voltage (Vdss)
100 V
-
Continuous Drain Current (ID)
38 A
38 A
Threshold Voltage
2 V
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
150 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
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描述
由其分销商提供的 Infineon IRF150 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package, TO-204AE-2
Infineon SCT
Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
N Channel Mosfet, 100V, 38A, To-3
Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)38 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
Power Dissipation150 W
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time170 ns
Turn-On Delay Time35 ns
Dimensions
Height7.74 mm