Infineon IRFP150NPBF

Name: Infineon IRFP150NPBF
Brand: Infineon
SKU: IRFP150NPBF

Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC

$ 1.1

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Distributor		SKU		Min	Pkg
Avnet	2	IRFP150NPBF	69	25				0.868	0.841	0.841	2d
Newark		IRFP150NPBF	1,348	1		3.270	2.040	1.710	1.460	1.460
Arrow Electronics	2	IRFP150NPBF	2,117	1		0.682	0.682	0.682	0.682	0.682
Future Electronics	2	IRFP150NPBF	31,200	25	Tube			1.100	1.070	1.040
Rochester Electronics	2	IRFP150NPBF	70,032					1.370	1.140	1.010	22h

数据表和文档

下载 Infineon IRFP150NPBF 的数据表和制造商文档。

官方数据表1 年前

库存历史记录

3 个月趋势:

-7.66%

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InfineonIRFP150NPBF

onsemiRFG40N10

Price @ 1000

$ 1.1

$ 1.328

Stock

3,033,890

93,853

Authorized Distributors

Mount

Through Hole

Case/Package

TO-247-3

TO-247

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

42 A

40 A

Threshold Voltage

4 V

Rds On Max

36 mΩ

40 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

160 W

Input Capacitance

1.9 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-08-13

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRFP150NPBF 的描述。

Transistor MOSFET Negative Channel 100 Volt 42A 3-Pin(3+Tab) TO-247AC

Jameco

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-247AC;PD 160W;VGS +/-20V

RS (Formerly Allied Electronics)

Power MOSFET, General Purpose, N Channel, 100 V, 42 A, 0.036 ohm, TO-247AC, Through Hole

Avnet

Single N-Channel 100V 36 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):36mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 100V, 39A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):36mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC