Infineon IRFB23N15DPBF

Name: Infineon IRFB23N15DPBF
Brand: Infineon
SKU: IRFB23N15DPBF

Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

$ 1.131

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFB23N15DPBF	31,981					0.857	0.711	0.634	11h
RS (Formerly Allied Electronics)		IRFB23N15DPBF	0	5	Bulk		1.760	1.550	1.550	1.550	4h
Farnell	2	IRFB23N15D	0	1		1.716*	1.716*	0.845*	0.695*	0.695*	11h
Verical		IRFB23N15DPBF	3,000	351					0.889	0.793
Component Stockers USA		IRFB23N15DPBF	13,034			0.720	0.720	0.680	0.620	0.620	5d

数据表和文档

下载 Infineon IRFB23N15DPBF 的数据表和制造商文档。

IHS

Datasheet13 页21 年前

Datasheet12 页25 年前

Datasheet12 页21 年前

Farnell

_legacy Avnet

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

+0.06%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

描述

由其分销商提供的 Infineon IRFB23N15DPBF 的描述。

Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET, 150V, 23A, 90 mOhm, 37 nC Qg, TO-220AB

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB

Avnet

SMPS MOSFET Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon